Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETsFOBELETS, K; BORGHS, G.Semiconductor science and technology. 1998, Vol 13, Num 3, pp 318-321, issn 0268-1242Article

Comparison of the multi-gate functionality of screen-grid field effect transistors with finFETsSHADROKH, Y; FOBELETS, K; VELAZQUEZ-PEREZ, J. E et al.Semiconductor science and technology. 2008, Vol 23, Num 9, issn 0268-1242, 095006.1-095006.9Article

Simulations of Si:SiGe MODFET analogue applicationsFOBELETS, K; JEAMSAKSIRI, W; HAMPSON, J et al.International journal of electronics. 2002, Vol 89, Num 8, pp 593-602, issn 0020-7217, 10 p.Article

Controlled shift of the optical resonance of fully processed asymmetric Fabry-Pérot modulator arraysFOBELETS, K; KELLY, B; HORAN, P et al.Semiconductor science and technology. 1996, Vol 11, Num 4, pp 582-586, issn 0268-1242Article

Influence of resistances on characteristics of vertically integrated resonant tunnelling diodesFOBELETS, K; VOUNCKX, R; BORGHS, G et al.Electronics Letters. 1993, Vol 29, Num 1, pp 57-59, issn 0013-5194Article

A GaAs pressure sensor based on resonant tunnelling diodesFOBELETS, K; VOUNCKX, R; BORGHS, G et al.Journal of micromechanics and microengineering (Print). 1994, Vol 4, Num 3, pp 123-128, issn 0960-1317Article

Matrix formalism for the triple-band effective-mass equationFOBELETS, K; VOUNCHX, R; BORGHS, G et al.Semiconductor science and technology. 1993, Vol 8, Num 10, pp 1815-1821, issn 0268-1242Article

A proposal for a three-bit A/D converter using three resonant tunnelling diodesFOBELETS, K; GENOE, J; VOUNCKX, R et al.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2106-2114, issn 0268-1242Article

Capacitances in double-barrier tunneling structuresGENOE, J; VAN HOOF, C; VAN ROY, W et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 9, pp 2006-2012, issn 0018-9383Article

Colour coding Ge concentrations in Si_1-xGe_x by bevelling and oxidation: CABOOMFOBELETS, K; TAN, T. L; THIELEMANS, K et al.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 510-515, issn 0268-1242, 6 p.Article

Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performanceOLSEN, S. H; O'NEILL, A. G; NORRIS, D. J et al.Semiconductor science and technology. 2002, Vol 17, Num 7, pp 655-661, issn 0268-1242Article

Terahertz imaging using strained-Si MODFETs as sensorsMEZIANI, Y. M; GARCIA-GARCIA, E; VELAZQUEZ-PEREZ, J. E et al.Solid-state electronics. 2013, Vol 83, pp 113-117, issn 0038-1101, 5 p.Conference Paper

Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiationRUMYANTSEV, S. L; FOBELETS, K; VEKSLER, D et al.Semiconductor science and technology. 2008, Vol 23, Num 10, issn 0268-1242, 105001.1-105001.4Article

Dispersive optical bistability in stratified structuresDANCKAERT, J; FOBELETS, K; VERETENNICOFF, I et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 15, pp 8214-8225, issn 0163-1829Article

A novel 3D embedded gate field effect transistor: Screen-grid FET: Device concept and modellingFOBELETS, K; DING, P. W; VELAZQUEZ-PEREZ, J. E et al.Solid-state electronics. 2007, Vol 51, Num 5, pp 749-756, issn 0038-1101, 8 p.Article

Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETsVELAZQUEZ, J. E; FOBELETS, K; GASPARI, V et al.SPIE proceedings series. 2004, pp 573-580, isbn 0-8194-5396-X, 8 p.Conference Paper

Study of current fluctuations in deep-submicron Si/SiGe n-channel MOSFET: impact of relevant technological parameters on the thermal noise performanceVELAZQUEZ, J. E; FOBELETS, K; GASPARI, V et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S191-S194, issn 0268-1242Conference Paper

Experimental study of depletion mode Si/SiGe MOSFETs for low-temperature operationFOBELETS, K; FERGUSON, R. S; GASPARI, V et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 555-558, isbn 88-900847-8-2, 4 p.Conference Paper

Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunnelling diodesFOBELETS, K; VOUNCKX, R; GENOE, J et al.Superlattices and microstructures. 1992, Vol 11, Num 1, pp 27-29, issn 0749-6036Article

pnp resonant tunneling light emitting transistorGENOE, J; VAN HOOF, C; FOBELETS, K et al.Applied physics letters. 1992, Vol 61, Num 9, pp 1051-1053, issn 0003-6951Article

Electrical Transport in Polymer-Covered Silicon NanowiresFOBELETS, K; DING, P; MOHSENI KIASARI, N et al.IEEE transactions on nanotechnology. 2012, Vol 11, Num 4, pp 661-665, issn 1536-125X, 5 p.Article

Effect of the gate scaling on the analogue performance of s-Si CMOS devicesFOBELETS, K; CALVO-GALLEGO, J; VELAZQUEZ-PEREZ, J. E et al.Semiconductor science and technology. 2011, Vol 26, Num 9, issn 0268-1242, 095030.1-095030.10Article

SiGe HMOSFET monolithic inverting current mirrorMICHELAKIS, K; DESPOTOPOULOS, S; PAPAVASSILIOU, C et al.Solid-state electronics. 2005, Vol 49, Num 4, pp 591-594, issn 0038-1101, 4 p.Article

Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 KGASPARI, V; FOBELETS, K; VELAZQUEZ-PEREZ, J. E et al.Semiconductor science and technology. 2004, Vol 19, Num 9, pp L95-L98, issn 0268-1242Article

SiGe virtual substrate HMOS transistor for analogue applicationsMICHELAKIS, K; DESPOTOPOULOS, S; GASPARI, V et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 386-389, issn 0169-4332, 4 p.Conference Paper